JPS58169971A - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法

Info

Publication number
JPS58169971A
JPS58169971A JP57052775A JP5277582A JPS58169971A JP S58169971 A JPS58169971 A JP S58169971A JP 57052775 A JP57052775 A JP 57052775A JP 5277582 A JP5277582 A JP 5277582A JP S58169971 A JPS58169971 A JP S58169971A
Authority
JP
Japan
Prior art keywords
film
conductive film
region
semiconductor device
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57052775A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0247853B2 (en]
Inventor
Shinichi Inoue
井上　信市
Masaru Shiraki
白木　勝
Nobuo Toyokura
豊蔵　信夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57052775A priority Critical patent/JPS58169971A/ja
Publication of JPS58169971A publication Critical patent/JPS58169971A/ja
Publication of JPH0247853B2 publication Critical patent/JPH0247853B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
JP57052775A 1982-03-30 1982-03-30 半導体装置およびその製造方法 Granted JPS58169971A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57052775A JPS58169971A (ja) 1982-03-30 1982-03-30 半導体装置およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57052775A JPS58169971A (ja) 1982-03-30 1982-03-30 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JPS58169971A true JPS58169971A (ja) 1983-10-06
JPH0247853B2 JPH0247853B2 (en]) 1990-10-23

Family

ID=12924230

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57052775A Granted JPS58169971A (ja) 1982-03-30 1982-03-30 半導体装置およびその製造方法

Country Status (1)

Country Link
JP (1) JPS58169971A (en])

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5948958A (ja) * 1982-08-12 1984-03-21 シ−メンス・アクチエンゲゼルシヤフト 半導体集積回路
JPH0391244A (ja) * 1989-09-02 1991-04-16 Fuji Electric Co Ltd 集積回路装置用縦形バイポーラトランジスタ
US5077227A (en) * 1986-06-03 1991-12-31 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5690561A (en) * 1979-12-22 1981-07-22 Fujitsu Ltd Manufacture of semiconductor device
JPS5735370A (en) * 1980-08-12 1982-02-25 Nec Corp Semiconductor device
JPS5843573A (ja) * 1981-09-08 1983-03-14 Matsushita Electric Ind Co Ltd バイポ−ラトランジスタ
JPS58142573A (ja) * 1982-02-19 1983-08-24 Hitachi Ltd 半導体集積回路およびその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5690561A (en) * 1979-12-22 1981-07-22 Fujitsu Ltd Manufacture of semiconductor device
JPS5735370A (en) * 1980-08-12 1982-02-25 Nec Corp Semiconductor device
JPS5843573A (ja) * 1981-09-08 1983-03-14 Matsushita Electric Ind Co Ltd バイポ−ラトランジスタ
JPS58142573A (ja) * 1982-02-19 1983-08-24 Hitachi Ltd 半導体集積回路およびその製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5948958A (ja) * 1982-08-12 1984-03-21 シ−メンス・アクチエンゲゼルシヤフト 半導体集積回路
US5077227A (en) * 1986-06-03 1991-12-31 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
JPH0391244A (ja) * 1989-09-02 1991-04-16 Fuji Electric Co Ltd 集積回路装置用縦形バイポーラトランジスタ

Also Published As

Publication number Publication date
JPH0247853B2 (en]) 1990-10-23

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